GP3D050A065B

$3.78

Description：DIODE SIL CARB 650V 135A TO247-2
Series：Amp+™
Mfr：SemiQ
Package：Tube

SKU:7895d4f59a7b Category: Single Diodes Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 650V 135A TO247-2
Series：Amp+™
Mfr：SemiQ
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：135A
Voltage - Forward (Vf) (Max) @ If：1.6 V @ 50 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：125 µA @ 650 V
Capacitance @ Vr, F：1946pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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GP3D050A065B

Overview

The GP3D050A065B is a Silicon Carbide (SiC) Schottky Diode manufactured by SemiQ. It features a 650V DC reverse voltage rating and a continuous forward current capacity of 50A. The device is housed in a TO-247-2 through-hole package. Key electrical specifications include a non-repetitive peak forward surge current of 300A, a maximum reverse leakage current of 22uA, and an operating junction temperature range from -55°C to +175°C.

Feature Summary

Utilizes Silicon Carbide technology for near-zero switching loss operation
Provides high efficiency with reduced heat dissipation requirements
Features a robust TO-247-2 package suitable for high-power applications

Applications

Power supply systems
Induction heating equipment
Fuel cell power generation
Solar inverters

Procurement Notes

Verify the specific suffix 'B' against the manufacturer's official datasheet to confirm pinout and thermal characteristics. Ensure the component meets RoHS compliance requirements if applicable to your assembly process. Cross-reference the 22-week standard lead time with current distributor availability to align with production schedules. Confirm the TO-247-2 package dimensions match your PCB footprint design constraints.

Selection Notes

Select this component when high-temperature operation up to 175°C is required. Choose based on the 650V blocking capability and 50A continuous current rating. Consider the SiC material properties for superior thermal management compared to silicon alternatives. Evaluate the 300A surge current tolerance for transient protection needs in the target circuit design.

Part Context

This diode belongs to the SemiQ QSiC family of Schottky diodes. The series is designed for high-efficiency power conversion applications. The product line emphasizes low thermal resistance and high reliability. It serves as a key component in modern power electronics requiring efficient energy handling.

Replacement Considerations

Check for direct substitutes within the SemiQ GP3D series with matching voltage and current ratings. Verify compatibility with existing thermal management solutions. Ensure any replacement maintains the TO-247-2 form factor for board integration.