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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 50A TO2472
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：50A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 50 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 1200 V
- Capacitance @ Vr, F：3040pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The GP3D050A120B is a Silicon Carbide (SiC) Schottky Diode manufactured by SemiQ. It features a maximum repetitive peak reverse voltage of 1200V and an average forward rectified current rating of 50A. The device exhibits a typical forward voltage of 1.7V at 50A. It is housed in a TO-247-2L package, designed for high-power applications requiring robust thermal performance and compact form factors.
Feature Summary
- Utilizes Silicon Carbide technology for superior thermal stability and efficiency compared to traditional silicon devices.
- Schottky barrier construction ensures fast switching speeds and minimal reverse recovery charge.
- TO-247-2L package provides reliable mounting and efficient heat dissipation for high-current operations.
Applications
- Uninterruptible Power Supplies (UPS)
- Solar Inverters
- Electric Vehicle Charging Systems
Procurement Notes
Verify the exact part number GP3D050A120B against official SemiQ documentation to ensure compatibility with your circuit design. Confirm that the TO-247-2L package dimensions match your PCB footprint requirements. Check for any specific handling instructions related to Silicon Carbide components during assembly.
Selection Notes
Select this component when high voltage blocking capability and high current handling are required in a compact package. Consider its SiC material properties for applications demanding higher operating temperatures and improved energy efficiency. Ensure the thermal management solution supports the power dissipation characteristics defined in the datasheet.
Part Context
This diode belongs to SemiQ's portfolio of wide-bandgap semiconductor devices. It is engineered for modern power electronics where size, weight, and efficiency are critical. The product line targets industries transitioning from silicon-based solutions to more advanced materials for enhanced performance.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify electrical parameters such as Vrrm, Io, and Vf before replacing. Ensure pinout compatibility if substituting within similar packages like TO-247 variants.
