GPI4TIC15DFV

$7.01

Description：RF MOSFET 6.5V 8DFN
Series：-
Mfr：GaNPower
Package：Tube

SKU:7edf783702b1 Category: Gate Drivers Brand: GaNPower

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Product introduction

GPI4TIC15DFV is listed in the Gate Driver range at ChipApex. The manufacturer field lists GaNPower. Its product description is RF MOSFET 6.5V 8DFN. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for GPI4TIC15DFV

Description：RF MOSFET 6.5V 8DFN
Series：-
Mfr：GaNPower
Package：Tube
Driven Configuration：Low-Side
Channel Type：Single
Number of Drivers：1
Gate Type：GaN FET
Voltage - Supply：5V ~ 8V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：-
Input Type：Non-Inverting
Rise / Fall Time (Typ)：30ns, 70ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-WDFN Exposed Pad
Supplier Device Package：8-DFN (8x8)
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：-

Gate Driver datasheet and documents for GPI4TIC15DFV

GPI4TIC15DFV

Gate Driver Overview

The GPI4TIC15DFV is a power integrated circuit based on GaN HEMT technology, manufactured by GaNPower. It features an N-channel configuration with a continuous drain current of 19.5A and a threshold voltage of 1.4V. The device utilizes a Surface Mount Technology (SMT) package with dimensions of 8.00 x 6.00mm. Designed for low to medium voltage applications up to 1200V and power levels below 20kW, it offers high efficiency in energy conversion.

Gate Driver Feature Summary

Built on GaN HEMT technology for superior performance compared to traditional silicon devices
High-efficiency energy conversion capability suitable for compact designs
Optimized for low to medium voltage and power application ranges

Gate Driver Applications

Low to medium voltage power systems
Applications requiring power levels below 20kW
High-efficiency energy conversion modules

Gate Driver Procurement Notes

Verify the specific datasheet version (e.g., v2.2) and manufacturer details (GaNPower International Inc.) against official documentation. Confirm package type (SMT, 8.00 x 6.00mm) and electrical parameters such as Idss and Vth match project requirements. Ensure sourcing from authorized distributors to guarantee component authenticity and quality standards.

Gate Driver Selection Notes

Select this component for applications operating within low to medium voltage limits (≤1200V) and power constraints (<20kW). Consider its GaN HEMT foundation for improved efficiency over traditional silicon alternatives. Evaluate the SMT package size (8.00 x 6.00mm) for PCB layout compatibility. Verify that the 1.4V threshold voltage aligns with gate drive capabilities.

Gate Driver Part Context

The GPI4TIC15DFV belongs to the GaNPower RF FET and MOSFET product line, specifically categorized under Power ICs based on Power GaN HEMTs. It is part of the broader portfolio of GaN power devices designed for efficient power management in modern electronic systems.