GPI65005DF

Single FETs, MOSFETs Overview

The GPI65005DF is an N-channel 650V GaN Power HEMT in a 5x6 mm DFN package. It features a typical RDS(on) of 240 mΩ, IDS of 5 A, and Qg of 2.6 nC. The device supports a maximum junction temperature of 150°C and offers a dv/dt capability of 200 V/ns. Key electrical parameters include BVdss of 650 V, Ciss of 45 pF, and zero reverse recovery charge (Qrr).

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance for superior power density.
• High dv/dt capability supporting ultra-high switching frequencies.
• Extremely low input capacitance and zero reverse recovery charge.

Single FETs, MOSFETs Applications

• Switching power applications
• Adapters
• Quick chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version against the manufacturer's official documentation before finalizing designs. Confirm that the tape and reel packaging quantity matches your assembly line requirements. Ensure gate drive circuits are optimized for the high dv/dt characteristics to minimize parasitic effects during procurement validation.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and compact size are critical. The integrated thermal pad aids heat dissipation. Consider the need for specialized drivers due to high slew rates. Evaluate system constraints regarding the 650V rating and 5A current capacity against your specific power stage requirements.

Single FETs, MOSFETs Part Context

This device belongs to the GaN Power HEMT family utilizing E-mode technology on silicon. It replaces traditional silicon MOSFETs in high-frequency topologies. The DFN package provides a low-profile solution suitable for space-constrained consumer electronics and industrial power supplies requiring high performance.

Single FETs, MOSFETs Replacement Considerations

Direct pin-to-pin replacement with silicon MOSFETs or IGBTs is not recommended due to different gate driving voltage requirements and high dv/dt sensitivity. Designers must implement optimized PCB layouts and appropriate gate drivers to manage circuit parasitics effectively.

Single FETs, MOSFETs FAQ

Can this device replace silicon MOSFETs directly?

No, direct pin-to-pin replacement is not advised. Special drivers and optimized PCB layouts are required to handle the high dv/dt and gate voltage differences.

Is an external Freewheeling Rectifier Diode needed?

No, the device has no inherent PN junction body diode, eliminating reverse recovery issues. However, dead time power loss should be managed due to the Vsd voltage.