GPI65007DF56

$2.98

Description：GaNFET N-CH 650V 7A DFN5x6
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)

SKU:b733db20653f Category: Single FETs, MOSFETs Brand: GaNPower

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Product introduction

GPI65007DF56 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GaNFET N-CH 650V 7A DFN5x6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPI65007DF56

Description：GaNFET N-CH 650V 7A DFN5x6
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：7A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：76.1 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for GPI65007DF56

GPI65007DF56

Single FETs, MOSFETs Overview

The GPI65007DF is an N-channel 650 V GaN Power HEMT in a DFN 5x6 package. It features a typical RDS(on) of 170 mΩ at VGS=6V, Ids=2.5A, and TJ=25°C. The device has a maximum continuous drain current of 7 A at 150°C and a gate charge (Qg) of 2.1 nC. Key electrical parameters include a breakdown voltage (BVdss) of 650 V, input capacitance (CISS) of 76.1 pF, and zero reverse recovery charge (Qrr). Switching performance includes a turn-on delay of 4 ns and rise time of 8 ns under standard test conditions.

Single FETs, MOSFETs Feature Summary

Ultra-low on-state resistance for high efficiency
High dv/dt capability up to 200 V/ns
Extremely low input capacitance
Zero reverse recovery charge

Single FETs, MOSFETs Applications

Switching power applications
Adapters
Quick chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version, as this component is listed as preliminary. Confirm that the ordering code matches the required DFN 5x6 surface mount package with bottom cooling. Ensure compatibility with gate drive requirements due to the specific threshold voltage and slew rate characteristics documented in the official specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring superior power density and ultra-high switching frequencies. The device is suitable for low to medium voltage applications up to 650 V. Consider the positive temperature coefficient of Rds,on which encourages paralleling multiple devices for higher current handling if necessary.

Single FETs, MOSFETs Part Context

This part belongs to the GaN Power HEMT family from GaNPower International Inc. It utilizes proprietary E-mode GaN on silicon technology. The device is designed to replace traditional silicon MOSFETs in applications demanding lower conduction losses and faster switching speeds without the need for external freewheeling diodes.

Single FETs, MOSFETs Replacement Considerations

GaN HEMTs are not direct pin-to-pin replacements for silicon MOSFETs or IGBTs. Special drivers and optimized PCB layouts are recommended to manage the high dv/dt slew rate and minimize circuit parasitics. Do not assume identical gate drive voltages or thermal management requirements.

Single FETs, MOSFETs FAQ

Can this device be used as a direct pin-to-pin replacement for a silicon MOSFET?

No. Due to different gate driving voltage requirements and extremely high dv/dt slew rates, special drivers and optimized PCB layouts are recommended.