GPI65007DF88

Single FETs, MOSFETs Overview

The GPI65007DF88 is an N-channel enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by GaNPower International Inc. Housed in a DFN 8x8 mm surface-mount package with bottom cooling, this device offers a drain-source breakdown voltage of 650 V and a typical on-resistance of 170 mΩ at 25°C. It features an extremely low gate charge of 2.1 nC and zero reverse recovery charge, enabling high-frequency switching applications.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance for improved conduction efficiency
• Zero reverse recovery charge eliminating body diode switching losses
• Extremely low input capacitance supporting ultra-high switching frequencies
• High drain-to-source voltage slew rate capability

Single FETs, MOSFETs Applications

• Switching power supplies
• Adapters
• Quick chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision, currently listed as version 2.5 preliminary, against your design requirements. Confirm that the DFN 8x8 mm package dimensions and thermal characteristics align with your PCB layout and cooling infrastructure. Ensure compatibility with recommended gate drive voltages and optimized PCB layouts to manage the high dv/dt slew rates inherent to this technology.

Single FETs, MOSFETs Selection Notes

Select this component for designs prioritizing high power density and efficiency over silicon MOSFETs or IGBTs. The positive temperature coefficient of Rds(on) facilitates safe paralleling for higher current applications. Note that special drivers and optimized PCB layouts are required due to different gate driving voltage requirements compared to traditional silicon devices.

Single FETs, MOSFETs Part Context

This device belongs to the GaN Power HEMT family utilizing proprietary E-mode GaN on silicon technology. Unlike silicon counterparts, it lacks inherent PN junction diodes, allowing operation in both first and third quadrants without external freewheeling diodes. The technology focuses on reducing system size and weight through superior switching performance and reduced parasitic effects.

Single FETs, MOSFETs Replacement Considerations

Direct pin-to-pin replacement for silicon MOSFETs or IGBTs is not supported due to distinct gate driving voltage requirements and high dv/dt characteristics. Designers must implement specialized drivers and optimized PCB layouts rather than performing simple substitution.

Single FETs, MOSFETs FAQ

Can this device replace a silicon MOSFET or IGBT directly?

No, direct pin-to-pin replacement is not feasible. Due to different gate driving voltage requirements and extremely high dv/dt slew rates, special drivers and optimized PCB layouts are necessary.

Is an external Freewheeling Rectifier Diode (FRD) needed?

No, an external FRD is not required because the GaN HEMT has no inherent PN junction diodes causing reverse recovery issues. However, dead time power loss should be managed as the Vsd voltage is typically close to 2V.