GPI65010DF56

Single FETs, MOSFETs Overview

The GPI65010DF56 is an N-channel enhancement-mode Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by GaNPower International Inc. It features a 650 V drain-source breakdown voltage and a maximum DC drain current of 10 A at 25°C case temperature. The device exhibits an ultra-low static on-resistance of 120 mΩ and a total gate charge of 2.6 nC. Packaged in a bottom-cooled 5x6 mm DFN format, it supports a maximum junction temperature of 150°C and offers high dv/dt capability with zero reverse recovery charge.

Single FETs, MOSFETs Feature Summary

• Zero reverse recovery charge eliminates body diode switching losses
• Ultra-low input capacitance enables superior switching performance
• Bottom-cooled DFN package facilitates efficient thermal management
• Capable of operation in both first and third quadrants

Single FETs, MOSFETs Applications

• Switching power applications
• Adapters
• Quick chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the selected gate driver can accommodate the required gate voltage levels and high slew rates inherent to this component. Ensure PCB layout guidelines are strictly followed to minimize parasitic inductance and optimize thermal dissipation through the bottom-cooled package.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high power density and ultra-high switching frequencies. The low gate charge reduces drive power requirements compared to silicon alternatives. Consider the need for specialized gate drivers capable of handling the high dv/dt characteristics. Evaluate the thermal resistance specifications to ensure adequate heat sinking for the intended operating environment.

Single FETs, MOSFETs Part Context

This device belongs to the GaNPower International Inc. portfolio of E-mode GaN HEMTs fabricated on silicon technology. It is designed to replace traditional silicon MOSFETs or IGBTs in high-frequency power conversion circuits. The product line emphasizes superior efficiency and reduced system size through advanced semiconductor materials and packaging techniques.

Single FETs, MOSFETs Replacement Considerations

Direct pin-to-pin replacement for silicon MOSFETs or IGBTs is not supported due to differences in gate driving voltage requirements and high dv/dt capabilities. Specialized drivers and optimized PCB layouts are recommended to manage circuit parasitics effectively when transitioning from legacy silicon devices.

Single FETs, MOSFETs FAQ

Is an external Freewheeling Rectifier Diode (FRD) required?

No, an external FRD is not required because the device lacks an inherent PN junction diode that causes reverse recovery issues. It can operate in both the first and third quadrants.

Can multiple units be paralleled?

Yes, paralleling is ideal due to the positive temperature coefficient of the on-resistance and the slightly positive temperature coefficient of the threshold voltage.