GPI65015TO

Single FETs, MOSFETs Overview

The GPI65015TO is an N-channel enhancement-mode Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by GaNPower International Inc. It features a 650V drain-source breakdown voltage and a maximum continuous drain current of 15A at a case temperature of 25°C. The device exhibits an ultra-low static on-resistance of 92mΩ and a total gate charge of 3.3nC. It operates within a junction temperature range up to 150°C and utilizes a TO-220-3 package.

Single FETs, MOSFETs Feature Summary

• Zero reverse recovery charge eliminates body diode switching losses
• High drain-to-source voltage slew rate capability for fast switching
• Extremely low input capacitance reduces drive power requirements
• Positive temperature coefficient of on-resistance enables safe paralleling

Single FETs, MOSFETs Applications

• Switching power supply converters
• Adapters and quick chargers
• High-frequency DC-DC conversion stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code GPI65015TO against the manufacturer's official documentation to confirm the TO-220-3 packaging configuration. Ensure that the procurement specifications align with the absolute maximum ratings, particularly the transient breakdown voltage limits and thermal resistance parameters defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high power density and superior efficiency at elevated switching frequencies. The zero reverse recovery charge makes it suitable for topologies where traditional silicon MOSFETs would suffer from significant tail current losses. Consider the need for specialized gate drivers capable of handling the high dv/dt characteristics inherent to GaN technology.

Single FETs, MOSFETs Part Context

This device belongs to the GaNPower International Inc. portfolio of E-mode GaN on silicon transistors. Unlike conventional silicon MOSFETs, these devices utilize proprietary technology to achieve low on-state resistance without the parasitic PN junction diodes found in silicon counterparts. This structural difference fundamentally alters the switching behavior and thermal management requirements compared to legacy semiconductor technologies.

Single FETs, MOSFETs Replacement Considerations

Pin-for-pin replacement with silicon MOSFETs or IGBTs is not recommended due to differences in gate driving voltage requirements and extremely high dv/dt slew rates. Specialized drivers and optimized PCB layouts are necessary to manage circuit parasitics effectively when substituting into existing designs.