GPIHV10DK

Single FETs, MOSFETs Overview

The GPIHV10DK is an N-channel 1200V GaN Power HEMT in a TO-252 package. It features a typical Rdson of 112 mΩ at Vgs=6V, Ids-max of 10A at Tcase=25°C, and Qg of 3.5 nC. The device has a BVdss of 1200V, Ciss of 105 pF, and td(on) of 6 ns. Thermal resistance RthJC is 1.25 °C/W, with a max junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance for superior power density
• High dv/dt capability up to 150 V/ns
• Extremely low input capacitance and zero reverse recovery charge
• Outstanding switching performance with fast turn-on and fall times

Single FETs, MOSFETs Applications

• Switching Power Applications
• Server and Telecom Power Application
• EV OBC and DC-DC Converters
• UPS, Inverters, PV

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version (e.g., Preliminary v1) against your design requirements. Confirm that the TO-252 package pinout matches your PCB layout, noting the thermal pad connection to the source terminal. Ensure gate drive circuits support the required voltage levels and high slew rate handling capabilities.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and ultra-high switching frequencies. Consider the positive temperature coefficient of Rdson for paralleling multiple devices. Evaluate PCB layout parasitics carefully due to the high dv/dt characteristics and ensure appropriate gate driver selection for optimal performance.

Single FETs, MOSFETs Part Context

This device belongs to the GaNPower International Inc. lineup of E-mode GaN on silicon technology products. It is designed to replace traditional silicon MOSFETs or IGBTs in applications demanding higher power density and efficiency. The proprietary technology enables extremely low on-state resistance and zero reverse recovery charge.

Single FETs, MOSFETs Replacement Considerations

Direct pin-to-pin replacement for silicon MOSFETs or IGBTs is not supported due to different gate driving voltage requirements and high dv/dt slew rates. Special drivers and optimized PCB layouts are recommended to minimize circuit parasitic impacts when substituting into existing designs.

Single FETs, MOSFETs FAQ

Can the GPIHV10DK be used as a direct pin-to-pin replacement for silicon MOSFETs?

No. Due to different gate driving voltage requirements and extremely high dv/dt slew rates, special drivers and optimized PCB layouts are recommended.

Is it necessary to parallel an FRD with the GPIHV10DK for inverters?

No. GaN devices have no inherent PN junction diodes causing reverse recovery issues and can operate in both first and third quadrants without an external FRD.