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GPIRGIC15DFV is listed in the Special Purpose Regulators range at ChipApex. The manufacturer field lists GaNPower. Its product description is Power IC based on Power GaN HEMT. Review the specifications below when checking this part for your BOM.
The GPIRGIC15DFV is a specialized power integrated circuit manufactured by GaNPower, utilizing Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology. It is housed in an 8-DFN (8x8 mm) package and functions as a voltage regulator IC with one output. The device integrates high-performance GaN FETs to deliver efficient power conversion. Key electrical characteristics include a maximum on-resistance of 105 milliohms at a gate voltage of 0V and a test current of 2.5A. The component is rated for a nominal voltage of 6.5V, designed for applications requiring compact form factors and high efficiency.
Verify the specific datasheet revision, as GaNPower documents may contain disclaimers regarding performance guarantees. Confirm the exact pinout and thermal pad requirements for the 8-DFN package during PCB layout. Ensure compatibility with the required 6.5V operating range and check for any specific driving or protection circuitry recommendations provided in the official documentation before integration.
Select this component when a compact, single-output regulator solution leveraging GaN technology is required. The 8-DFN package suits applications with strict spatial limitations. Consider the 105mOhm on-resistance specification for efficiency calculations at low currents. Verify that the 6.5V rating aligns with the system's voltage requirements and that the thermal management strategy supports the DFN package's dissipation capabilities.
This part belongs to GaNPower's portfolio of Gallium Nitride-based power devices and related ICs. GaNPower develops these components using patented circuit topologies to achieve high performance in various packaging forms. The GPIRGIC15DFV represents the company's focus on integrating GaN HEMTs into functional ICs rather than discrete transistors, aiming to simplify design implementation for power regulation tasks.
Publicly confirmed substitute part numbers are not available in the provided source material. Users should consult GaNPower directly or authorized distributors for verified alternatives. Do not assume cross-compatibility with other GaN regulators without verifying pinouts, electrical parameters, and thermal specifications against the official datasheet.
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