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GPIXV30DFN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GANFET N-CH 1200V 30A DFN8X8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for GPIXV30DFN
- Description：GANFET N-CH 1200V 30A DFN8X8
- Series：-
- Mfr：GaNPower
- Package：Bag
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：30A
- Drive Voltage (Max Rds On, Min Rds On)：6V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs：8.25 nC @ 6 V
- Vgs (Max)：+7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：236 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
Single FETs, MOSFETs datasheet and documents for GPIXV30DFN
Single FETs, MOSFETs Overview
The GPIXV30DFN is an N-channel 1200V GaN Power HEMT in a DFN8x8 package. It features a typical RDS(on) of 65mΩ at VGS=6V, Ids=7.5A and BVdss of 1200V. The device has a continuous drain current of 30A and gate charge (Qg) of 11.2nC. Key parameters include CISS of 223pF, COSS of 79pF, and CRSS of 3.2pF. Thermal resistance RthJC is 0.9°C/W. Switching times include td(on) of 19ns and tr of 20ns.
Single FETs, MOSFETs Feature Summary
- Ultra-low on-state resistance for high efficiency
- High dv/dt capability up to 150 V/ns
- Extremely low input capacitance
- Zero reverse recovery charge
Single FETs, MOSFETs Applications
- Switching power applications
- Server and telecom power
- EV OBC and DC-DC converters
- UPS, inverters, PV systems
Single FETs, MOSFETs Procurement Notes
Verify the exact part number against official GaNPower documentation, as datasheets may list GPIHV30DFN. Confirm package type is DFN8x8. Check voltage rating is 1200V. Ensure specifications match your design requirements before ordering.
Single FETs, MOSFETs Selection Notes
Select this component for high-frequency, high-efficiency designs requiring compact size. Consider thermal management due to power density. Verify gate drive compatibility with E-mode GaN requirements. Evaluate PCB layout for parasitic minimization.
Single FETs, MOSFETs Part Context
This is a wide bandgap semiconductor device based on proprietary E-mode GaN on silicon technology. It offers superior power density compared to silicon alternatives. Designed for modern power electronics demanding ultra-high switching frequencies.
Single FETs, MOSFETs Replacement Considerations
No direct pin-to-pin replacement exists for silicon MOSFETs or IGBTs due to different gate driving voltage requirements and high dv/dt slew rates. Special drivers and optimized PCB layouts are recommended when transitioning from silicon devices.
Single FETs, MOSFETs FAQ
Can this device replace silicon MOSFETs or IGBTs directly?
No, it cannot be a direct pin-to-pin switch. Different gate driving voltage requirements and extremely high dv/dt slew rates necessitate special drivers and optimized PCB layouts.
Is an external FRD needed for inverter applications?
No, GaN HEMTs have no inherent PN junction diodes causing reverse recovery issues. They operate in both first and third quadrants without needing parallel FRDs.
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