GS8128236GD-333I

Memory IC Overview

The GS8128236GD-333I is a 144 Mbit Synchronous Burst Static Random Access Memory (SRAM) manufactured by GSI Technology. It features a memory organization of 4 Megawords by 36 bits and supports dual voltage operation at 2.5V or 3.3V, with supply voltage ranges from 2.3V to 3.6V. The device achieves a maximum clock frequency of 333 MHz with an access time of 4.5 ns. It utilizes a parallel interface and is available in a BGA-165 surface-mount package. Operating temperatures range from -40°C to +100°C, and it belongs to the SyncBurst series.

Memory IC Feature Summary

• Supports high-speed synchronous burst operations with pipeline/flow-through modes for efficient data transfer.
• Features dual voltage compatibility allowing operation at either 2.5V or 3.3V power supplies.
• Includes on-chip write FIFO buffers to manage data flow and reduce bus contention.

Memory IC Applications

• High-performance networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure systems
• Industrial automation control units

Memory IC Procurement Notes

Verify the specific suffix 'I' confirms the industrial temperature grade (-40°C to +100°C). Confirm the BGA-165 package dimensions match your PCB footprint requirements. Ensure the design supports the required 2.5V or 3.3V logic levels. Check moisture sensitivity handling procedures as indicated in the datasheet. Validate that the 333 MHz clock speed meets system timing constraints.

Memory IC Selection Notes

Select this component when a wide 36-bit data path is necessary for high-bandwidth applications. The 144 Mbit capacity provides substantial buffer space for complex data processing tasks. The industrial temperature rating makes it suitable for harsh environments where standard commercial parts may fail. Consider the BGA-165 package for dense board layouts requiring robust thermal performance.

Memory IC Part Context

This part belongs to the GS8128236GD series of SyncBurst SRAMs. It shares architectural similarities with other devices in the family but is distinguished by its specific 4M x 36 organization and 333 MHz speed grade. The series is designed for applications demanding high throughput and deterministic latency in synchronous memory interfaces.

Memory IC FAQ

What is the supported voltage range for the GS8128236GD-333I?

The device supports dual voltage operation, functioning at either 2.5V or 3.3V, with an absolute maximum rating of 3.6V and a minimum of 2.3V.

Does this SRAM support pipelined operations?

Yes, the GS8128236GD-333I supports both pipeline and flow-through modes to optimize data throughput and reduce wait states.