GS8160Z36DGT-250IV

Memory IC Overview

The GS8160Z36DGT-250IV is an 18 Mbit Synchronous No Bus Turnaround (NBT) Static Random Access Memory manufactured by GSI Technology. It features a memory organization of 512K x 36 bits and supports a maximum clock frequency of 250 MHz with a typical access time of 5.5 ns. The device operates on dual power supplies, accepting either 2.5 V or 3.3 V for both the core and I/O sections, within a range of 2.3 V to 3.6 V. It is housed in a 100-lead Thin Quad Flat Package (TQFP) suitable for surface mount technology and supports an industrial temperature range from -40°C to +100°C.

Memory IC Feature Summary

• Supports NBT functionality allowing zero wait read-write-read bus utilization
• User-configurable Pipeline and Flow Through operating modes
• Fully pin-compatible with pipelined and flow through NtRAM, NoBL, and ZBT SRAMs
• Includes ZZ pin for automatic power-down

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network processors
• FIFO buffers in digital signal processing systems
• Frame buffer storage in video processing applications

Memory IC Procurement Notes

Verify the specific suffix IV indicates the industrial temperature grade (-40°C to +100°C) and voltage configuration against the official datasheet. Confirm package integrity for the 100-lead TQFP form factor. Ensure supply chain sources provide RoHS compliance documentation. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Validate that the selected variant matches the required 2.5V or 3.3V dual-supply operation.

Memory IC Selection Notes

Select this component when zero-wait state performance is critical for system throughput. The NBT architecture eliminates turnaround delays found in traditional synchronous SRAMs. Choose the 250 MHz speed bin if high-frequency clocking is required. Verify compatibility with existing designs using NtRAM or ZBT devices due to pin compatibility. Consider the 100-lead TQFP package constraints for PCB layout and thermal management requirements.

Memory IC Part Context

This device belongs to the GS8160Z series of 18 Mb Synchronous NBT SRAMs. It shares architectural similarities with other GSI Technology memory products but offers specific density and interface configurations. The series supports various speed grades and package options to accommodate different design constraints. It represents a specialized solution for high-performance embedded memory applications requiring low latency.

Memory IC Replacement Considerations

Direct substitutes include other GS8160Z36 variants with compatible speed grades. Devices from the NtRAM or ZBT families may serve as functional replacements due to pin compatibility. Verify electrical specifications and timing parameters before substitution.