GS8182D18BGD-300I

Memory IC Overview

The GS8182D18BGD-300I is a Dual Data Rate (DDR) Static Random Access Memory (SRAM) manufactured by GSI Technology. It features an 18 Mbit storage capacity organized as 1M x 18 bits. The device supports a maximum clock frequency of 300 MHz and utilizes a parallel interface. Operating voltage ranges from 1.7 V to 1.9 V, with a maximum power supply current of 545 mA. It operates within a temperature range of -40°C to +85°C and is housed in a 165-bump BGA package.

Memory IC Feature Summary

• Supports simultaneous read and write operations via the SigmaQuad-II interface
• Features fully coherent read and write pipelines for high-speed data processing
• Includes ZQ mode pin for programmable output drive strength calibration

Memory IC Applications

• High-performance networking equipment requiring low-latency memory
• Telecommunications infrastructure systems
• Industrial control applications operating in extended temperature environments

Memory IC Procurement Notes

Verify the specific suffix 'I' confirms industrial temperature rating compliance (-40°C to +85°C). Confirm the package type matches the required 165-bump BGA footprint. Ensure the design accounts for the specified 1.8V core voltage and HSTL I/O standards. Check for moisture sensitivity level requirements during assembly.

Memory IC Selection Notes

Select this component when a 1M x 18 bit DDR SRAM configuration is required at 300 MHz speeds. It is suitable for designs needing separate I/O pins and JEDEC-standard pinouts. Consider the 165-bump BGA package constraints and thermal management needs for the specified current draw.

Memory IC Part Context

This part belongs to the SigmaQuad-II family of synchronous SRAMs from GSI Technology. These devices are designed for high-throughput applications using a pipelined architecture. The series offers various density options while maintaining compatible physical footprints for system scalability.