GS8182T18BGD-300I

Memory IC Overview

The GS8182T18BGD-300I is a synchronous burst static random-access memory (SRAM) manufactured by GSI Technology. It features a storage capacity of 18 Mbit organized as 1M x 18 bits. The device supports a maximum clock frequency of 300 MHz with an access time of 450 ps. It operates on a single 1.8 V power supply, with a voltage range of 1.7 V to 1.9 V. The component is housed in a 165-bump Ball Grid Array (BGA) package and is rated for industrial operating temperatures from -40°C to +85°C.

Memory IC Feature Summary

• Supports high-speed parallel data transfer at frequencies up to 300 MHz
• Utilizes a 165-bump BGA package for surface-mount integration
• Operates within a specified industrial temperature range

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure systems
• Industrial control applications requiring fast memory access

Memory IC Procurement Notes

Verify the specific suffix 'I' confirms the industrial temperature grade (-40°C to +85°C). Confirm the package type matches the required PCB footprint. Check RoHS compliance status against current manufacturing standards. Ensure the supplier provides valid traceability documentation for the component batch.

Memory IC Selection Notes

Select this part when a 1M x 18 configuration is required for synchronous burst operations. Compare against other GS8182 variants if different organization or speed grades are needed. Verify that the 1.8 V I/O and core voltage levels match the system design constraints. Consider the BGA package complexity during assembly planning.

Memory IC Part Context

This component belongs to the GS8182 series of synchronous burst SRAMs. These devices are designed for applications demanding high bandwidth and low latency. The series typically includes various density and speed options packaged in standard BGA formats to facilitate system integration across multiple electronic sectors.