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GS8256418GB-400I is listed in the Memory IC range at ChipApex. The manufacturer field lists GSI Technology Inc.. Its product description is IC SRAM 288MBIT PAR 119FPBGA. Review the specifications below when checking this part for your BOM.
The GS8256418GB-400I is a synchronous burst static random-access memory (SRAM) manufactured by GSI Technology. It features a storage capacity of 288 Mbit organized as 16M x 18 bits. The device supports dual voltage operation with a minimum supply voltage of 2.3 V and a maximum of 3.6 V, accommodating both 2.5 V and 3.3 V systems. It achieves a maximum clock frequency of 400 MHz with an access time of 4 ns. The component utilizes a parallel interface and is housed in a 119-ball BGA package. It operates within a temperature range of -40°C to +100°C.
Verify the specific suffix 'I' confirms the extended industrial temperature range (-40°C to +100°C) compared to commercial variants. Confirm the 119-BGA package footprint matches your PCB design constraints. Ensure voltage levels align with the specified 2.3V to 3.6V operational window. Check RoHS compliance status as indicated in official documentation before finalizing procurement orders.
Select this component when a 288 Mbit density with 18-bit word width is required. Choose this part for applications demanding 400 MHz synchronous performance. Consider this model for designs needing 2.5V or 3.3V logic compatibility. Opt for this series if industrial temperature stability is a critical system requirement.
This part belongs to the GS82564GB family of SyncBurst SRAMs from GSI Technology. It shares architectural similarities with other members like the GS8256436GB-400I but differs in data width organization. The family is designed for high-throughput applications requiring low latency and high bandwidth memory solutions.
Direct substitutes include the GS8256418GB-400 without the industrial suffix if temperature requirements allow. Verify pinout and electrical specifications against the GS8256436GB-400I if wider data paths are acceptable.
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