GS82564Z18GD-250I

Memory IC Overview

The GS82564Z18GD-250I is a high-speed synchronous dynamic random-access memory (SDRAM) component manufactured by GSI Technology Inc. This specific model features a 64M-bit capacity organized as 4 banks of 16,384 rows by 1,024 columns with an 18-bit word width, including four error correction bits. It operates at a maximum clock frequency of 250 MHz, enabling data transfer rates up to 500 Mbps per pin. The device utilizes a low-voltage interface and supports burst lengths of two, four, and eight in a sequential pattern. It is housed in a 165-ball ball grid array package designed for surface-mount applications.

Memory IC Feature Summary

• Supports high-frequency operation with a 250 MHz clock rate for rapid data throughput
• Integrates built-in error correction capabilities via dedicated parity bits within the 18-bit data path
• Features a multi-bank architecture allowing concurrent operations across independent memory arrays
• Utilizes a compact ball grid array package optimized for dense printed circuit board layouts

Memory IC Applications

• High-performance computing systems requiring fast memory access speeds
• Digital signal processing equipment needing large buffer capacities
• Network infrastructure devices utilizing high-bandwidth data transmission
• Graphics processing units demanding rapid frame buffer updates

Memory IC Procurement Notes

Verify the exact suffix codes against manufacturer documentation to ensure compatibility with voltage levels and temperature ranges. Confirm package integrity upon receipt, as ball grid array components are sensitive to physical stress during handling. Ensure that the supply voltage matches the specified requirements to prevent damage to the internal circuitry. Check for any specific ordering prefixes that may indicate different testing grades or packaging options.

Memory IC Selection Notes

Select this component when system design requires a balance between high density and moderate speed capabilities. Consider the 18-bit width if error correction is necessary without additional external logic. Evaluate the thermal performance characteristics relative to the intended operating environment. Compare power consumption metrics against alternative solutions to optimize overall system efficiency and battery life where applicable.

Memory IC Part Context

This SDRAM belongs to the broader family of synchronous DRAMs used in embedded systems and consumer electronics. GSI Technology Inc. produced these components to meet industry standards for volatile memory storage. The part represents a specific configuration within their portfolio, distinguished by its unique organization and speed grade. Understanding its place within the memory hierarchy helps in designing compatible controllers and interfaces.

Memory IC Replacement Considerations

Consult official substitution lists for electrically equivalent parts with identical pinouts and timing parameters. Verify that any replacement maintains the same voltage specifications and organizational structure. Ensure that the substitute component supports the required burst modes and bank configurations. Cross-reference datasheets to confirm compatibility with existing system controllers before implementation.