GS82582Q38GE-500I

Memory IC Overview

The GS82582Q38GE-500I is a QDR-II SRAM with 288 Mbit capacity, organized as 8M x 36. It operates at a maximum clock frequency of 500 MHz within a 1.7 V to 1.9 V supply range. The device draws up to 1.63 A and functions between -40°C and +85°C. It utilizes a BGA-165 package for surface mount installation.

Memory IC Feature Summary

• Supports high-speed parallel data transfer via the QDR-II interface architecture.
• Integrates on-chip clock path circuitry for synchronous operation without external clock skew management.

Memory IC Applications

• High-performance networking equipment requiring rapid packet buffering
• Telecommunications infrastructure systems
• Industrial automation control units

Memory IC Procurement Notes

Verify the specific suffix 'I' confirms industrial temperature rating compliance before ordering. Confirm the 'GE' designation matches the required lead-free and RoHS specifications for your assembly process. Ensure the BGA-165 footprint aligns with your PCB design constraints.

Memory IC Selection Notes

Select this component when an 8M x 36 organization is required for wide data paths. The 500 MHz speed class suits applications needing low latency. Compare against other QDR-II variants if different memory densities or pin configurations are needed for the system architecture.

Memory IC Part Context

This part belongs to the SigmaQuad-II+ family of synchronous static random access memories. These devices are designed for high-throughput applications where deterministic latency and simple interface protocols are critical for system performance and reliability.

Memory IC Replacement Considerations

Check for other GS82582Q38GE variants with different speed grades or temperature ranges. Verify pin compatibility with existing designs before substituting.