GS832018AGT-333I

Memory IC Overview

The GS832018AGT-333I is a synchronous burst cache SRAM manufactured by GSI Technology. It features a memory organization of 2M x 18, providing a total capacity of 36 Mbit. The device supports a maximum clock frequency of 333 MHz with a typical access time of 4.5 ns. It operates within a voltage range of 2.3 V to 3.6 V and is housed in a TQFP-100 surface-mount package. The component functions as Single Data Rate (SDR) memory with pipeline or flow-through architecture options.

Memory IC Feature Summary

• Supports synchronous burst operations with selectable pipeline or flow-through architectures for flexible data transfer modes.
• Capable of operating at dual voltage levels of 2.5 V or 3.3 V to accommodate various system power requirements.
• Designed for high-speed parallel interface applications requiring low latency and high throughput.

Memory IC Applications

• High-performance computing systems requiring fast cache memory
• Network infrastructure equipment needing high-bandwidth data storage
• Industrial control systems utilizing synchronous burst logic

Memory IC Procurement Notes

Verify the specific suffix 'IT' against official documentation to confirm temperature grade and packaging details. Ensure compatibility with 3.3V logic levels if used in mixed-voltage environments. Confirm RoHS compliance status through current manufacturer declarations before integration into regulated assemblies.

Memory IC Selection Notes

Select this model when a 333 MHz synchronous SRAM with 18-bit width is required. Compare against lower speed variants like the -200I or -150I if system timing allows for reduced performance. Consider the -375 variant for faster access times if available and compatible with the target board design constraints.

Memory IC Part Context

This component belongs to the GS832018AGT series of SyncBurst SRAMs from GSI Technology. It shares architectural similarities with other members of the family but is distinguished by its 333 MHz speed grade. The part is designed to replace older asynchronous or slower synchronous memories in high-end embedded and networking applications.

Memory IC Replacement Considerations

Direct substitutes include the GS832018AGT-333 without the 'I' suffix for commercial temperature ranges, or the GS832018AGT-375 for faster 4.2 ns access times. Verify pinout and electrical specifications match exactly before swapping.