GS8320Z18AGT-250I

Memory IC Overview

The GS8320Z18AGT-250I is a 36 Mbit Synchronous NBT SRAM manufactured by GSI Technology. It features a 2 M x 18 organization with a maximum clock frequency of 250 MHz and an access time of 5.5 ns. The device operates within a supply voltage range of 2.3 V to 3.6 V, supporting both 2.5 V and 3.3 V core and I/O supplies. It utilizes a parallel interface and is housed in a 100-lead TQFP package suitable for surface mount technology. The component supports industrial operating temperatures from -40°C to +85°C.

Memory IC Feature Summary

• Supports user-configurable pipeline and flow-through architectures for flexible data handling.

Memory IC Applications

• High-speed cache memory systems
• Network infrastructure equipment
• Industrial control applications

Memory IC Procurement Notes

Verify the specific suffix 'GT' corresponds to the 100-lead TQFP package configuration. Confirm that the '-250I' designation aligns with the required 250 MHz speed grade and industrial temperature range specifications. Ensure compatibility with 2.5 V or 3.3 V power domains as defined in the official datasheet.

Memory IC Selection Notes

Select this component when a 36 Mbit synchronous SRAM with high-speed parallel interface is required. It is suitable for designs needing zero wait state read-write-read transitions via NBT functionality. Consider the 100-lead TQFP form factor for PCB layout constraints and verify support for configurable pipeline modes.

Memory IC Part Context

This part belongs to the GS8320Z18AGT series of NBT SRAMs. It shares architectural similarities with other devices in the family but is distinguished by its specific 2 M x 18 density and 100-pin TQFP packaging. The series emphasizes high bus utilization through No Bus Turn Around technology.

Memory IC Replacement Considerations

Consult official documentation for pin-compatible alternatives within the same series. Verify electrical parameters such as access time and voltage ranges before substituting with other SRAM models.