GS8320Z36AGT-250IV

Memory IC Overview

The GS8320Z36AGT-250IV is a 36 Mbit Synchronous NBT SRAM manufactured by GSI Technology. It features a memory organization of 1M x 36 and supports parallel interface communication. The device operates with a maximum clock frequency of 250 MHz and has an access time of 5.5 ns. Power supply requirements range from a minimum of 2.3 V to a maximum of 3.6 V, with maximum power currents specified at 230 mA and 285 mA. It functions within a commercial temperature range of 0°C to +70°C and is housed in a TQFP-100 surface-mount package.

Memory IC Feature Summary

• Supports Read-Write-Read bus utilization for efficient data transfer
• Features user-configurable Pipeline and Flow Through modes
• Includes ZQ mode pin for selectable high/low output drive strength

Memory IC Applications

• High-speed cache memory systems
• Network infrastructure equipment
• Industrial control applications

Memory IC Procurement Notes

Verify the specific suffix IV against official datasheets to confirm industrial temperature rating compliance. Ensure voltage levels match system requirements between 2.3V and 3.6V. Confirm package type is TQFP-100. Check humidity sensitivity handling procedures as indicated in documentation.

Memory IC Selection Notes

Select this component when a 36-bit wide synchronous SRAM with 250 MHz performance is required. Consider the TQFP-100 package for surface mount assembly. Evaluate power consumption limits against available supply rails. Verify compatibility with existing bus architectures requiring pipeline or flow-through operation modes.

Memory IC Part Context

This part belongs to the GS8320Z36AGT series of NBT SRAMs. These devices are designed for high-performance applications requiring fast data access. The series offers various speed grades and voltage options. The Z36 designation indicates the 36-bit data width configuration common in specific memory bus standards.

Memory IC Replacement Considerations

GS8320Z36AGT-250 is a compatible variant within the same series.