GS8321Z36AGD-333I

Memory IC Overview

The GS8321Z36AGD-333I is a 36 Mbit Synchronous Static RAM with a 1M x 36 organization. It operates at a maximum clock frequency of 333 MHz, providing access times as fast as 4.5 ns in Flow Through mode and 2.5 ns in Pipeline mode. The device supports 2.5 V or 3.3 V core and I/O power supplies within +10%/-10% tolerance. It utilizes a JEDEC-standard 165-bump BGA package.

Memory IC Feature Summary

• NBT (No Bus Turn Around) functionality enables zero wait read-write-read bus utilization by eliminating deselect cycles during mode transitions.
• User-configurable operation between Pipelined and Flow Through modes via the FT pin to optimize latency or throughput requirements.
• Supports Linear or Interleave Burst modes controlled by the LBO pin for flexible burst address sequencing.
• Includes IEEE 1149.1 JTAG-compatible Boundary Scan for manufacturing test and system diagnostics.

Memory IC Applications

• High-speed cache memory systems
• Network routing and switching equipment
• Telecommunications infrastructure
• Industrial control systems

Memory IC Procurement Notes

Verify that the specific part number suffix matches the required temperature range and voltage configuration. Confirm the package type corresponds to the design footprint. Ensure compliance with RoHS standards if applicable. Check for moisture sensitivity levels prior to soldering. Validate supply voltage compatibility with the target system architecture.

Memory IC Selection Notes

Select this component when high bandwidth and low latency are critical. Choose Pipeline mode for consistent throughput or Flow Through mode for reduced latency. Ensure the system supports the required 2.5 V or 3.3 V power rails. Verify that the PCB layout accommodates the 165-bump BGA package dimensions and pitch.

Memory IC Part Context

This device belongs to the GS8321Z series of NBT SRAMs from GSI Technology. It is designed for applications requiring high data rates and efficient bus utilization. The series offers various speed grades and configurations to meet diverse performance needs in embedded memory solutions.

Memory IC Replacement Considerations

The datasheet states the device is fully pin-compatible with pipelined and flow through NtRAM, NoBL, and ZBT SRAMs. Verify electrical characteristics and timing parameters against existing components before substitution.

Memory IC FAQ

How does the NBT feature improve bus efficiency?

NBT eliminates the need for deselect cycles when switching between read and write operations, allowing continuous data transfer without inserting dead cycles.

What determines the burst sequence order?

The Linear Burst Order (LBO) pin determines the sequence. A low state selects Linear Burst, while a high state selects Interleaved Burst.

How is the device put into Sleep mode?

Driving the ZZ pin high initiates Sleep mode after two clock cycles, reducing current consumption to ISB2 levels while preserving internal state.