GS8642Z72GC-250I

Memory IC Overview

The GS8642Z72GC-250I is a 72 Mbit Static Random Access Memory (SRAM) manufactured by GSI Technology. It features a memory organization of 1M x 72 and supports a maximum clock frequency of 250 MHz with an access time of 6.5 ns. The device operates on a parallel interface and accepts power supply voltages ranging from 2.3 V to 3.6 V, with maximum current consumption specified at 340 mA or 480 mA depending on operating conditions. It is housed in a BGA-209 package suitable for surface mount technology and functions within a temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Supports NBT (No Bus Turn Around) functionality for zero wait Read-Write-Read bus utilization
• User-configurable Pipeline and Flow Through architecture modes
• Includes IEEE 1149.1 JTAG-compatible Boundary Scan capability
• Features ZQ mode pin for user-selectable high/low output drive strength

Memory IC Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network processing systems
• Data storage in industrial control applications requiring wide data buses

Memory IC Procurement Notes

Verify the specific suffix 'GC' against official manufacturer documentation to confirm voltage and feature configurations, as ordering suffixes may alter electrical characteristics. Confirm RoHS compliance status directly with the supplier, as sources indicate varying details regarding lead content and environmental certifications for this component series.

Memory IC Selection Notes

Select this component when a 72-bit wide data path is required alongside high-frequency operation up to 250 MHz. Ensure the design accommodates the BGA-209 footprint and manages thermal dissipation within the specified industrial temperature limits. Verify that the system logic supports the selected Pipeline or Flow Through mode configuration.

Memory IC Part Context

This part belongs to the GS8642Z72GC family of NBT SRAMs designed for high-performance embedded memory applications. It shares architectural similarities with other devices in the series but is distinguished by its 1M x 72 density and 250 MHz speed grade. The device is intended for use in systems requiring fast, synchronous burst memory access with wide data interfaces.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.