Memory IC GS88036CGT-250IV product image

GS88036CGT-250IV

$23.05
  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:GSI Technology Inc.
  • Package:Tray

SKU:5eafbb0e2691 Category: Brand:

  
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GS88036CGT-250IV is listed in the Memory IC range at ChipApex. The manufacturer field lists GSI Technology Inc.. Its product description is IC SRAM 9MBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for GS88036CGT-250IV

  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:GSI Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, Standard
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 2V, 2.3V ~ 2.7V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (20x14)
  • Access Time:-

Memory IC datasheet and documents for GS88036CGT-250IV

GS88036CGT-250IV

Memory IC Overview

The GS88036CGT-250IV is a 9 Mbit synchronous burst static random-access memory (SRAM) organized as 256K words by 36 bits. Manufactured by GSI Technology, this component supports dual voltage operation with core and I/O supplies of either 1.8 V or 2.5 V. It features a maximum clock frequency of 250 MHz and an access time of 5.5 ns. The device is housed in a 100-pin Thin Quad Flat Package (TQFP) suitable for surface mount technology. It operates within an industrial temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Supports high-speed synchronous burst operations at up to 250 MHz
  • Enables flexible power configurations with selectable 1.8 V or 2.5 V core and I/O supplies
  • Integrates IEEE 1149.1 JTAG-compatible boundary scan for testing and debugging
  • Includes internal input resistors on mode pins to allow floating connections

Memory IC Applications

  • High-performance cache memory systems
  • Industrial embedded control applications
  • Telecommunications infrastructure equipment
  • Network routing and switching hardware

Memory IC Procurement Notes

Verify the specific suffix IV indicates industrial temperature rating and package variant against official datasheets. Confirm voltage compatibility requirements for both core and I/O domains before integration. Ensure ESD protection measures are implemented during handling due to CMOS sensitivity. Cross-reference pinout diagrams with target PCB layout specifications to guarantee correct interface alignment.

Memory IC Selection Notes

Select this component when system architecture requires wide 36-bit data paths combined with high-frequency synchronous interfaces. Consider the 1.8 V/2.5 V dual-voltage capability if the design necessitates mixed voltage domains without level shifters. Evaluate the 100-pin TQFP footprint constraints against available board space. Verify that the 5.5 ns access time meets the timing margins of the host processor or FPGA interface.

Memory IC Part Context

This part belongs to the GS880 series of Synchronous Burst SRAMs designed for demanding digital signal processing and networking tasks. The series emphasizes bandwidth utilization through pipelined and flow-through architectures. The GS88036 variant specifically addresses applications requiring wider data buses than standard 18-bit or 32-bit memories, reducing external bus cycles.

Memory IC Replacement Considerations

Consult manufacturer documentation for direct pin-to-pin replacements within the GS880 family. Verify electrical characteristics match for any cross-series substitutions. No alternative part numbers are confirmed in the provided source material.

GS88036CGT-250IVGS88036CGT-250IV
$23.05
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