GSBC857BDE

Overview

The GSBC857BDE is a dual PNP transistor manufactured by Good-Ark Semiconductor, housed in an SOT-563 surface-mount package. It features epitaxial die construction and is designed for switching and amplifier applications. Key electrical ratings include a collector-emitter voltage (VCEO) of -45 V, a collector-base voltage (VCBO) of -50 V, and a continuous collector current (IC) of -100 mA. The device has a maximum power dissipation of 150 mW and operates within a temperature range of -55°C to +150°C. DC current gain (hFE) ranges from 220 to 475 at IC=-2mA, with a transition frequency (fT) of 100 MHz.

Feature Summary

• Dual PNP transistors integrated into a single ultra-small surface mount package
• Epitaxial die construction for reliable performance
• Suitable for general-purpose switching and amplifier applications

Applications

• General-purpose switching circuits
• Amplifier stages
• Low-voltage signal processing

Procurement Notes

Verify the specific ordering suffix 'BDE' corresponds to the required hFE binning level during procurement. Confirm RoHS compliance status as indicated in the manufacturer's documentation. Ensure the SOT-563 package dimensions match the target PCB footprint layout requirements before finalizing orders.

Selection Notes

Select this component when space-constrained designs require two matched PNP transistors in a compact form factor. Consider the -45 V collector-emitter voltage rating and -100 mA current limit for circuit design. Evaluate the thermal resistance characteristics if operating near maximum power dissipation limits.

Part Context

This part belongs to the GSBC857xDE series, which includes variants with different gain bins: GSBC857ADE, GSBC857BDE, and GSBC857CDE. All variants share identical electrical ratings but differ in DC current gain specifications. The BDE variant specifically targets the mid-range gain specification defined in the datasheet.

Replacement Considerations

Direct replacements must match the SOT-563 package and dual PNP configuration. Verify that substitute components meet or exceed the -45 V VCEO and -100 mA IC ratings. Check pinout compatibility to ensure correct connection of the two independent transistor sections.