GSXD120A012S1-D3

Overview

The GSXD120A012S1-D3 is a Silicon Carbide Schottky diode array manufactured by SemiQ. It features a reverse voltage rating of 120V and a continuous forward current of 120A. The device utilizes a SOT-227-4 package with chassis mount installation. Key electrical parameters include a maximum forward voltage of 880mV at 120A and a typical reverse leakage current of 3mA at 120V. It operates within a junction temperature range of -40°C to +175°C, ensuring reliable performance in high-power applications.

Feature Summary

• Utilizes silicon carbide (SiC) technology for superior thermal stability and switching efficiency compared to traditional silicon devices.
• Features an ultra-fast recovery characteristic inherent to Schottky barrier construction, minimizing reverse recovery charge losses.
• Designed with a robust SOT-227-4 chassis mount package to facilitate efficient heat dissipation and secure mechanical integration.

Applications

• High-frequency DC-DC converters
• Free-wheeling diodes in motor drives
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix 'D3' against the official SemiQ datasheet to confirm pinout configuration and packaging specifications. Ensure that the 120V rating aligns with the circuit's peak inverse voltage requirements. Confirm compatibility with the SOT-227-4 mounting interface for thermal management design. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability.

Selection Notes

Select this component when low forward voltage drop and high current handling are critical for efficiency. The 120A rating suits applications requiring significant power throughput. Consider the 120V reverse voltage limit for low-voltage high-current topologies. Evaluate the thermal resistance of the chassis mount solution to maintain junction temperatures within the specified operational range under full load conditions.

Part Context

This part belongs to SemiQ's GSXD series of silicon carbide Schottky diode arrays. The series is characterized by high-speed switching capabilities and ruggedness suitable for demanding power electronics environments. The GSXD120A012S1-D3 specifically addresses needs for compact, high-efficiency rectification in modern power conversion architectures.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult SemiQ technical support or authorized distributors for direct replacements or pin-compatible alternatives that meet identical electrical and mechanical specifications.

FAQ

What is the maximum forward voltage drop at rated current?

The maximum forward voltage is 880mV when conducting 120A.

How many independent diodes are contained in this package?

The device contains two independent Schottky diodes.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175°C.