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The GSXD160A008S1-D3 is a Silicon Carbide (SiC) Schottky diode module manufactured by SemiQ. It features an 80V maximum repetitive reverse voltage and a continuous forward current of 160A at case temperature. The device utilizes the SOT-227-4 miniBLOC package for chassis mounting. Key electrical parameters include a typical forward voltage of 840mV at 160A, a maximum junction-to-case thermal resistance of 0.5°C/W, and a non-repetitive peak surge forward current rating of 640A. The component supports a maximum operating junction temperature of 175°C.
Verify the specific suffix D3 against the manufacturer's official datasheet to confirm pinout orientation and terminal plating specifications. Ensure that the ordering documentation explicitly references the SOT-227-4 mechanical drawing dimensions to guarantee compatibility with existing chassis mounting hardware and thermal interface materials.
Select this component when designing systems requiring low switching losses and high current handling capabilities in a chassis-mount form factor. Evaluate the thermal resistance characteristics against the system's heatsink capacity to ensure the junction temperature remains within the specified 175°C limit under continuous load conditions.
This part belongs to the SemiQ GSXD series of SiC Schottky diode arrays. The series is engineered for high-efficiency power conversion applications where traditional silicon rectifiers exhibit excessive switching losses or thermal limitations due to their slower reverse recovery characteristics.
Public confirmed substitute part numbers are not available in the provided source data.