GSXD160A012S1-D3

GSXD160A012S1-D3

  • Description:DIODE MOD SCHOT 120V 160A SOT227
  • Series:-

SKU:6943165e8451 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOT 120V 160A SOT227
  • Series:-
  • Mfr:SemiQ
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):120 V
  • Current - Average Rectified (Io) (per Diode):160A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 160 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 120 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

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GSXD160A012S1-D3

Overview

The SemiQ GSXD160A012S1-D3 is a silicon carbide Schottky diode array housed in a SOT-227-4 (miniBLOC) package. It features two independent diodes with a maximum reverse voltage of 120 V and a continuous forward current rating of 160 A. The module exhibits a maximum forward voltage of 880 mV at 160 A, supporting operation within a junction temperature range of -55 °C to +175 °C.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for high thermal stability and efficiency
  • Provides dual independent Schottky rectification channels
  • Designed for chassis mounting via the SOT-227-4 miniBLOC form factor

Applications

  • High-current DC power supply rectification
  • Industrial motor drive freewheeling circuits
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix D3 against the manufacturer's latest datasheet to confirm pinout compatibility and thermal interface specifications. Ensure that the procurement documentation explicitly references the SOT-227-4 package dimensions and the 120 V / 160 A ratings to prevent substitution errors with similar series components.

Selection Notes

Select this component when applications require low forward voltage drop at high currents exceeding standard silicon limits. The SiC material enables superior performance in high-temperature environments up to 175 °C. Consider the 120 V reverse blocking capability and the dual-channel configuration for bridge or parallel circuit topologies requiring robust thermal management.

Part Context

This part belongs to SemiQ's discrete diode array portfolio, specifically engineered for power electronics. It represents a high-power density solution utilizing advanced SiC manufacturing processes. The miniBLOC packaging allows for efficient heat dissipation through direct chassis contact, distinguishing it from lower-power surface-mount alternatives.

Replacement Considerations

Cross-reference with other SemiQ GSXD series variants for compatible voltage and current ratings. Verify mechanical footprint equivalence before substituting with generic SOT-227 packages. Confirm electrical characteristics match the original design requirements to ensure system reliability.

GSXD160A012S1-D3GSXD160A012S1-D3

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