GT700P08T

$1.27

Description：P-80V, -25A,RD<72M@-10V,VTH-2V~-
Series：SGT
Mfr：Goford Semiconductor
Package：Tube

SKU:03b1a15129f6 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT700P08T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is P-80V, -25A,RD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT700P08T

Description：P-80V, -25A,RD<72M@-10V,VTH-2V~-
Series：SGT
Mfr：Goford Semiconductor
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：72mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1639 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for GT700P08T

GT700P08T

Single FETs, MOSFETs Overview

The GT700P08T is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of -80 V and a continuous drain current of -25 A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 75 mΩ at VGS = -10V, a gate threshold voltage ranging from -2.0 V to -4.0 V, and a total gate charge of 75 nC. It supports a pulsed drain current of -100 A and offers a power dissipation capacity of 125 W with a junction-to-case thermal resistance of 1 °C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized on-resistance and switching performance
100% avalanche tested for rugged operation in harsh environments
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch applications
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package marking against official documentation before procurement. Confirm that the TO-220 packaging configuration matches system requirements. Ensure compliance with RoHS standards as stated in the datasheet. Cross-reference absolute maximum ratings with actual operating conditions to prevent device failure during implementation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring an 80 V P-Channel MOSFET with high current handling capabilities. Evaluate the thermal resistance values against the expected heat dissipation in the target application. Consider the gate charge specifications when designing drive circuits for DC/DC converters or power switches to ensure efficient switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to the P-Channel Enhancement Mode Power MOSFET category produced by Goford Semiconductor. It is designed for general-purpose power switching applications where low conduction losses and robust avalanche performance are required. The device is suitable for integration into systems utilizing standard TO-220 mounting solutions.