GTRB246608FC-V1-R2

Overview

The GTRB246608FC-V1-R2 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by MACOM Technology Solutions. It operates within the 2300-2400 MHz frequency range and delivers 500W of output power at a 48V bias voltage. The device utilizes GaN-on-SiC technology to achieve high performance in RF applications. It is supplied in a reel package format, with a factory packaging quantity of 50 units per reel. This component is classified as a GaN Field Effect Transistor suitable for demanding signal conditioning tasks.

Feature Summary

• Utilizes GaN-on-SiC technology for robust high-power RF performance
• Designed for operation in the 2300-2400 MHz frequency band
• Provides 500W output capability at standard 48V bias conditions

Applications

• High-power RF amplification systems
• Military radar transmitters
• Electronic warfare equipment
• Communications infrastructure

Procurement Notes

Verify current availability status directly with the manufacturer or authorized distributors, as this item may be subject to factory special order requirements. Confirm specific ordering suffixes and packaging quantities against official datasheets to ensure compatibility with existing supply chain protocols. Request updated lead times and compliance documentation prior to finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency in the S-band frequency range. Ensure thermal management solutions are adequate for 500W power dissipation. Verify that the driving circuitry supports the required gate voltage levels for optimal GaN HEMT switching characteristics. Consider the reel packaging constraints during assembly planning.

Part Context

This part belongs to MACOM's portfolio of GaN field effect transistors, specifically engineered for high-power density applications. It represents an advancement in wide-bandgap semiconductor technology, offering superior performance compared to traditional silicon-based counterparts in terms of breakdown voltage and electron mobility.

Replacement Considerations

Consult official MACOM substitution guides for verified alternative part numbers. Do not assume cross-compatibility with other GaN HEMTs without verifying pinout, electrical parameters, and thermal specifications against the original datasheet.