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HAH3DR 1200-S0E is listed in the Current Sensors range at ChipApex. The manufacturer field lists LEM USA Inc.. Its product description is TRANSDUCER. Review the specifications below when checking this part for your BOM.
The LEM HAH3DR 1200-S0E is an open-loop Hall effect current sensor designed for high-power applications. It features a nominal primary current (IPN) of 1200 A and measures bidirectional AC and DC currents. The device provides a proportional isolated output ranging from 0.5 V at -IPN to 4.5 V at +IPN, with a zero-current offset of 2.5 V. It utilizes a magnetic core assembled with proprietary ASIC technology to ensure low offset and high linearity within specified temperature ranges.
Verify the specific suffix 'S0E' against official LEM documentation to confirm mechanical integration requirements, as this variant is designed for installation on thick busbars with cable connectors. Ensure compatibility with the target inverter module's spatial constraints and thermal management specifications before procurement.
Select this component when a robust solution for measuring high currents up to 1200 A is required in electric vehicle traction drives. The choice depends on the need for high bandwidth, fast response times, and tolerance to high dv/dt environments typical in modern power electronics. Verify that the busbar mounting configuration matches the system design.
This part belongs to the HAH3DR series, which includes variants rated for 600 A, 700 A, 800 A, and 1500 A. The series is engineered for xEV applications, offering different mechanical designs such as S07/SPx for direct module integration and S0x versions for busbar mounting. All variants share similar electrical performance characteristics tailored for high-voltage traction inverters.
Direct substitutes within the same family include HAH3DR 600-S0E, HAH3DR 800-S0E, and HAH3DR 1500-S0A. When replacing, verify that the new part's current rating meets or exceeds the system's maximum load requirements and that the mechanical interface remains compatible with the existing busbar structure.
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