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HAT2038R-EL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET 2N-CH 60V 5A 8SOP. Review the specifications below when checking this part for your BOM.
The HAT2038R-EL-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features an SOT-883 package with eight terminals and contains two separate elements with built-in diodes. The device operates in enhancement mode with a maximum drain-source voltage of 30 V and a continuous drain current of 8 A. Its maximum on-resistance is specified at 0.029 Ω. The component supports high-speed power switching applications, functions up to a maximum operating temperature of 150 °C, and complies with RoHS standards.
Verify the specific datasheet revision and pinout configuration against the official Renesas documentation before integration. Confirm that the SOT-883 package dimensions and thermal characteristics align with the target PCB layout requirements. Ensure compliance with relevant environmental regulations such as RoHS for the intended market.
Select this component when a dual N-channel MOSFET solution is required in a small outline package. The 30 V rating and 8 A current capacity suit low-voltage power management tasks. Evaluate the 0.029 Ω on-resistance against thermal dissipation needs in the specific application environment.
This part belongs to the HAT series of power MOSFETs from Renesas Electronics. The series focuses on providing robust switching performance in compact form factors suitable for space-constrained electronic designs. The HAT2038R variant specifically addresses applications requiring dual-channel isolation or synchronous rectification.
Consult official Renesas cross-reference lists for verified substitutes. Ensure any replacement maintains the same 30 V breakdown voltage, 8 A current rating, and SOT-883 package compatibility.
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