HBDM60V600W-7

Overview

The HBDM60V600W-7 is a complex transistor array containing one PNP (MMBT2907A) and one NPN (MMBTA06) bipolar junction transistor in an SOT-363 package. It features a maximum power dissipation of 200 mW at 25°C ambient temperature. The PNP transistor supports a collector current of -600 mA with a collector-emitter voltage of -60 V, while the NPN transistor handles 500 mA at 65 V. Both devices exhibit a gain-bandwidth product of 100 MHz and operate within a junction temperature range of -55°C to +150°C.

Feature Summary

• Epitaxial planar die construction for robust performance
• Lead-free design compliant with RoHS standards
• Molded plastic case material with UL 94V-0 flammability rating

Applications

• Half H-bridge motor driver circuits
• Actuator driver applications
• General-purpose switching logic

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm datasheet revision DS30701 Rev. 5-2 matches the delivered batch. Ensure storage conditions adhere to J-STD-020D Level 1 moisture sensitivity requirements prior to soldering.

Selection Notes

Select this component when a compact dual-transistor solution is required for low-power half H-bridge topologies. Verify that the 200 mW total device power dissipation limit accommodates the specific thermal environment. Ensure the SOT-363 footprint aligns with the PCB layout guidelines provided in application note AP02001.

Part Context

This part belongs to the HBDM60 series of complex transistor arrays designed specifically for driving motors and actuators. It integrates complementary PNP and NPN transistors into a single surface-mount package to reduce board space compared to discrete components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified documentation.