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Product Detailed Parameters
- Description：TRANS NPN/PNP 60V/80V SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：600mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)：60V, 80V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA, 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 10mA, 1V / 100 @ 150mA, 10V
- Power - Max：200mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The HBDM60V600X-7 is a complex transistor array containing one PNP and one NPN bipolar junction transistor (BJT) in an SOT363 package. It is designed for half H-bridge motor and actuator driver applications. The device features epitaxial planar die construction and operates within a temperature range of -55°C to +150°C. Maximum ratings include a collector-emitter voltage of 60V for the PNP and 65V for the NPN, with continuous collector currents of 600mA and 500mA respectively. Total power dissipation is rated at 200mW.
Feature Summary
- Epitaxial planar die construction
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Bipolar transistor half H-bridge motor drivers
- Actuator driver circuits
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm date code alignment with production timelines. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering. Validate that the specific ordering suffix matches the required packaging configuration for the intended assembly process.
Selection Notes
Select this component when a compact dual-transistor solution is required for low-power switching tasks. The SOT363 package minimizes board space compared to discrete components. Verify that the maximum voltage and current ratings align with the specific load requirements of the target circuit design before finalizing the bill of materials.
Part Context
This part belongs to the HBDM60V600 series of complex transistor arrays manufactured by Diodes Incorporated. These devices are specifically engineered to replace multiple discrete transistors in half H-bridge configurations, simplifying circuit layout and reducing overall component count in motor control and actuation systems.
Replacement Considerations
MMDT2227-TP
FAQ
What is the thermal resistance from junction to ambient air?
The thermal resistance (RθJA) is 625 °C/W.
What is the maximum collector-base breakdown voltage for the NPN transistor?
The maximum collector-base breakdown voltage (V(BR)CBO) for the NPN transistor is 80 V.
How is the device packaged and what is the standard packing quantity?
The device is packaged in SOT363 and supplied in Tape & Reel quantities of 3000.
