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The HDBLS107GH is a 1.0 Amp glass passivated bridge high efficient rectifier manufactured by Taiwan Semiconductor Corporation. It features a silicon diode element configured as a single-phase, four-element bridge rectifier with a maximum repetitive peak reverse voltage of 1000 V and a maximum average forward rectified current of 1 A. The device exhibits a maximum non-repetitive peak forward surge current of 50 A and a maximum forward voltage of 1.7 V. It operates within a junction temperature range of -55 °C to 150 °C and utilizes a DBS plastic package.
Verify the exact part number against official Taiwan Semiconductor documentation to confirm the specific suffix designation. Ensure compliance with RoHS standards and UL recognition requirements relevant to the target application. Cross-reference datasheet revisions to validate electrical parameters before procurement.
Select this component for applications requiring a 1000 V rating in a compact surface mount configuration. Evaluate thermal management needs based on the 150 °C maximum operating temperature limit. Confirm that the 1 A continuous current rating meets the load requirements while accounting for derating factors at elevated ambient temperatures.
This component belongs to the HDB(S)101G through HDB(S)107G series of 1.0 Amp glass passivated bridge rectifiers. The series offers various voltage ratings from 50 V to 1000 V, sharing common physical dimensions and packaging characteristics. The HDBLS107GH specifically denotes the 1000 V variant within this high-efficiency product line.
Compatible alternatives include other 1A 1000V bridge rectifiers in similar packages such as the HDBS107G or equivalent parts from manufacturers like MCC or LGE. Verify pinout compatibility and thermal performance metrics when substituting.