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The HFA3046BZ96 is an ultra-high frequency RF bipolar transistor array fabricated using a silicon complementary bipolar process. It integrates five dielectrically isolated NPN transistors on a common monolithic substrate within a 14-pin SOIC-Narrow package. The device supports a maximum collector-emitter voltage of 8 V and a continuous collector current of 65 mA. It operates with a transition frequency of 8 GHz for the NPN sections and maintains a minimum DC current gain (hFE) of 40 at 10 mA and 2 V. The component functions reliably across a temperature range from -55°C to +125°C, with a power dissipation rating of 150 mW.
Verify the specific suffix designation against official manufacturer documentation to confirm lead-free status and annealing specifications. Confirm moisture sensitivity level requirements prior to surface mount assembly. Ensure compatibility with existing PCB footprint dimensions and thermal management strategies during integration planning.
Select this component when a compact solution requiring multiple matched NPN devices is necessary for UHF operations. Consider the 14-pin narrow SOIC package constraints for board space limitations. Evaluate the 8 GHz transition frequency against system bandwidth requirements to ensure adequate performance margins for the intended application.
This part belongs to the HFA30xx series of ultra-high frequency transistor arrays produced by Renesas Electronics. The series includes variants such as the HFA3096, which combines NPN and PNP types, and the HFA3127, which offers higher voltage ratings. These components share a common fabrication process designed for robust performance in harsh environments.
The HFA3046BZ serves as the tube-packaged equivalent to the HFA3046BZ96 reel variant. Verify pinout compatibility and electrical parameters before substituting with other models in the HFA30xx family, as voltage ratings and transistor configurations vary significantly between parts.