HFA3096B96

HFA3096B96

$1.86
  • Description:RF TRANS 3 NPN 8V 5.5GHZ 16-SOIC
  • Series:-

SKU:0270580c47e1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 3 NPN 8V 5.5GHZ 16-SOIC
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • Transistor Type:3 NPN + 2 PNP
  • Voltage - Collector Emitter Breakdown (Max):8V
  • Frequency - Transition:8GHz, 5.5GHz
  • Noise Figure (dB Typ @ f):3.5dB @ 1GHz
  • Gain:-
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 2V, 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SOIC
  • Grade:-
  • Qualification:-

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HFA3096B96

Overview

The HFA3096B96 is an ultra-high frequency transistor array fabricated using a complementary bipolar UHF-1 process. It integrates five dielectrically isolated transistors on a common monolithic substrate, configured as three NPN and two PNP devices. The NPN transistors exhibit a transition frequency (fT) of 8 GHz, while the PNP transistors provide an fT of 5.5 GHz. Both types exhibit low noise characteristics, making them suitable for high-frequency amplifier and mixer applications. The device offers access to individual terminals for maximum application flexibility.

Feature Summary

  • Monolithic construction provides close electrical and thermal matching among the five integrated transistors.
  • Dielectric isolation ensures independent operation of individual transistors within the array.
  • Complementary NPN/PNP configuration allows for versatile circuit design in RF applications.

Applications

  • High frequency amplifier circuits
  • RF mixer applications
  • UHF band signal processing

Procurement Notes

Verify the manufacturer designation, as Harris Corporation assets were acquired by Renesas Electronics. Confirm the specific suffix '96' against official datasheets to ensure compatibility with annealed lead finishes and MIL-spec requirements. Check for RoHS compliance status and moisture sensitivity levels before integration into production assemblies.

Selection Notes

Select this component when a mixed NPN/PNP array is required for UHF applications. Ensure the design accommodates the 8 GHz NPN and 5.5 GHz PNP transition frequencies. Verify that the SOIC-Narrow-16 package dimensions fit the PCB layout constraints. Consider the low noise figure if signal integrity is critical in the target application.

Part Context

The HFA3096 series belongs to a family of ultra-high frequency transistor arrays including the HFA3046, HFA3127, and HFA3128. While the HFA3046 and HFA3127 are all-NPN arrays and the HFA3128 is all-PNP, the HFA3096 specifically combines both polarities. This makes it distinct from its siblings in the HFA3096/HFA3127/HFA3128 lineup.

Replacement Considerations

Direct substitutes include other models from the same HFA3096 series or the broader HFA3046/HFA3127/HFA3128 family if polarity requirements can be adjusted. Verify pinout compatibility and electrical parameters such as fT and noise figure when considering alternative manufacturers.

FAQ

What is the transition frequency for the NPN transistors in the HFA3096?

The NPN transistors in the HFA3096 array exhibit a transition frequency (fT) of 8 GHz.

How many transistors are included in the HFA3096 array?

The HFA3096 array consists of five dielectrically isolated transistors: three NPN and two PNP.

What manufacturing process is used for the HFA3096?

The HFA3096 is fabricated using a complementary bipolar UHF-1 process.

HFA3096B96HFA3096B96
$1.86
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