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Product Detailed Parameters
- Description：IGBT 600V 40A TO-247
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：164 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：116 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The HGTG20N60C3R is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS series, manufactured by Harris Corporation. It integrates an anti-parallel hyperfast diode and supports a continuous collector current of 45A at 25°C. The device features a TO-247 package with three terminals. Key electrical parameters include a collector-emitter saturation voltage of approximately 2V and a gate charge of roughly 80nC. It offers 600V switching SOA capability and a short circuit rating, designed for low conduction loss applications.
Feature Summary
- Combines high input impedance MOSFET gate drive with low on-state bipolar transistor conduction characteristics.
- Integrates a hyperfast anti-parallel diode to minimize reverse recovery effects in switching circuits.
- Maintains stable on-state voltage drop across operating temperatures from 25°C to 150°C.
Applications
- High-frequency power conversion topologies requiring fast switching speeds.
- Motor control systems utilizing insulated gate bipolar transistors.
- Industrial inverters and uninterruptible power supply (UPS) units.
Procurement Notes
Verify manufacturer authenticity as Harris Corporation assets were acquired by Fairchild Semiconductor and subsequently ON Semiconductor. Confirm the specific suffix 'R' indicates reel packaging if required by assembly equipment. Check for RoHS compliance status relative to production date, as older Harris batches may differ from modern equivalents.
Selection Notes
Select this component when a 600V blocking voltage and 45A continuous current capacity are required. Ensure the application benefits from the integrated hyperfast diode's low reverse recovery time. Verify that the TO-247 thermal management solution meets the junction temperature limits under expected load conditions.
Part Context
This part belongs to the UFS (Ultra Fast Switching) series developed by Harris Corporation. The series was later continued by Fairchild Semiconductor after acquisition. The HGTG20N60C3R represents a specific variant within this lineage, distinguished by its 45A rating and integrated diode configuration compared to other series members.
Replacement Considerations
Fairchild Semiconductor FGH20N60C3D is a direct functional equivalent from the same product lineage. ON Semiconductor IGBTs with matching 600V/45A ratings and TO-247 packages may serve as alternatives if pin compatibility is confirmed.
