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Product Detailed Parameters
- Description：IGBT 600V 54A TO-220-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
- Power - Max：167 W
- Switching Energy：55µJ (on), 50µJ (off)
- Input Type：Standard
- Gate Charge：78 nC
- Td (on/off) @ 25°C：17ns/96ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The HGTP12N60A4D is a Fairchild Semiconductor N-channel Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 through-hole package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 54 A. The device supports a maximum gate-emitter voltage of ±20 V and operates within a temperature range of -55 °C to +150 °C. Its physical dimensions are 15.87 x 4.82 x 20.82 mm, designed for robust thermal management in high-power applications.
Feature Summary
- High current handling capability with a 54 A continuous collector current rating
- Robust voltage blocking performance rated at 600 V collector-emitter breakdown
- Integrated anti-parallel diode functionality for efficient switching cycles
- Thermal stability maintained across an extended operating temperature range
Applications
- Industrial motor drives and control systems
- Switch-mode power supplies requiring high efficiency
- Inverter circuits for renewable energy systems
Procurement Notes
Verify the manufacturer part number HGTP12N60A4D against official Fairchild or onsemi datasheets to confirm technical specifications. Ensure the TO-247 package type matches your board layout requirements. Check for lead-free compliance status if required by your manufacturing standards. Confirm availability through authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a 600 V IGBT with high current capacity is needed for through-hole mounting. The TO-247 package offers superior heat dissipation compared to smaller packages. Consider the 54 A current rating relative to your load requirements and ensure adequate heatsinking is provided for optimal thermal performance during operation.
Part Context
This IGBT belongs to the Fairchild Semiconductor power transistor lineup, specifically designed for medium to high-power switching applications. The TO-247 package is standard for industrial-grade devices requiring reliable thermal performance. It serves as a critical switching element in circuits managing significant electrical loads.
Replacement Considerations
HGTP12N60A4D may be cross-referenced with other 600V 54A TO-247 IGBTs from manufacturers like onsemi or Infineon. Verify pinout compatibility and saturation voltage characteristics before substitution. Ensure the replacement device meets or exceeds the original thermal and electrical ratings.
