HGTP20N60C3R

Overview

The HGTP20N60C3R is a rugged, ultrafast switching N-channel Insulated Gate Bipolar Transistor (IGBT) from Harris Semiconductor. It integrates an anti-parallel hyperfast diode to facilitate efficient motor control applications. The device combines high input impedance with low on-state conduction loss. Key electrical parameters include a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 20A at 25°C. The package configuration is TO-247.

Feature Summary

• Ultrafast switching capability for improved efficiency in motor-controlled designs
• Integrated anti-parallel hyperfast diode for simplified circuit topology
• Low on-state conduction loss characteristics

Applications

• Motor control systems
• Power inversion circuits
• High-frequency switching power supplies

Procurement Notes

Verify the manufacturer origin carefully, as this part number was originally produced by Harris Semiconductor, which underwent corporate restructuring. Current availability may be listed under successor entities such as Intersil or Renesas. Confirm that the specific suffix 'R' corresponds to the required packaging variant before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a 600V blocking voltage with a 20A continuous current capacity. The integrated hyperfast diode eliminates the need for external freewheeling components in certain topologies. Ensure thermal management solutions accommodate the power dissipation requirements inherent to IGBT technology in high-current switching scenarios.

Part Context

This device belongs to the UFS (Ultrafast Switching) series developed by Harris Semiconductor. The series was designed to replace conventional power transistors in industrial applications. Following Harris's semiconductor division acquisition, these products were transitioned through Intersil to Renesas Electronics, maintaining the original performance specifications.