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HIP2100IBZT is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.
The HIP2100IBZT is a high-frequency half-bridge N-channel power MOSFET driver IC manufactured by Renesas Electronics. It features two independent drivers with a peak output current of 2 A and operates within a supply voltage range of 9 V to 14 V. The device supports propagation delays up to 35 ns, with rise and fall times of 500 ns. It functions reliably across an operating temperature range from -40 °C to +125 °C and is housed in an SOIC-8 package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to your production timeline. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate that the SOIC-8 package dimensions match your PCB footprint requirements before finalizing procurement orders.
Select this component when independent high-speed control of N-channel MOSFETs is required without external bootstrap diodes. Consider the 500 ns transition times for frequency limitations compared to faster variants. Evaluate the 9 V to 14 V supply range against your system's available power rails. Assess thermal performance needs given the 1.3 W power dissipation capability in the standard SOIC-8 package.
This part belongs to the HIP2100 series of half-bridge drivers designed for cost-effective, high-frequency operation. It serves as a successor to older versions like the HIP2100IBT, offering updated packaging and compliance standards. The series emphasizes simplicity and reliability for driving power switches in various industrial and consumer electronics applications.
HIP2100IBT is a confirmed direct substitute, though it may have different compliance statuses.
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