HIP2100IR

Gate Driver Overview

The HIP2100IR is a high-frequency, 100V half-bridge N-channel power MOSFET driver IC manufactured by Renesas Electronics Corporation. It features independently controlled and matched high-side and low-side gate drivers with an 8ns delay time, providing flexibility in dead-time selection. The device operates on a supply voltage range of 9V to 14V and delivers a peak output current of 2A. It utilizes a proprietary level-shifter topology that combines the low-power benefits of pulsed operation with the safety of DC operation. An integrated bootstrap diode eliminates the need for discrete components.

Gate Driver Feature Summary

• Independent control of high-side and low-side drivers with matched 8ns propagation delays
• Integrated bootstrap diode removes requirement for external discrete diodes
• Level-shifter topology supports both pulsed and DC operation modes
• Undervoltage protection forces outputs low on both sides

Gate Driver Applications

• High-frequency half-bridge power conversion circuits
• N-channel MOSFET gate driving applications
• Industrial motor control systems
• AC/DC and DC/DC converter topologies

Gate Driver Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm package type and tape/reel specifications. Ensure compatibility with your PCB footprint, as variations exist between SOIC and QFN packages within the HIP2100 family. Confirm RoHS compliance status for your region's regulatory requirements before finalizing procurement.

Gate Driver Selection Notes

Select this component when a cost-effective, high-frequency solution for driving N-channel MOSFETs in a half-bridge configuration is required. The 8ns matched delay allows for precise dead-time management. Consider the available package options, such as SOIC or QFN, based on thermal dissipation needs and board space constraints relative to other variants in the series.

Gate Driver Part Context

The HIP2100 belongs to Renesas' portfolio of half-bridge gate drivers designed for general-purpose power switching. It serves as a foundational component for medium-power applications requiring reliable isolation between logic inputs and high-voltage power stages. The series includes various package options to accommodate different manufacturing and thermal requirements.

Gate Driver Replacement Considerations

HIP2100IBZT

Gate Driver FAQ

How does the HIP2100 handle high-side supply undervoltage?

Undervoltage protection on the high-side supply forces the output low, ensuring safe operation during insufficient voltage conditions.

What is the typical propagation delay matching between channels?

The high-side and low-side gate drivers are matched to 8ns, allowing for maximum flexibility in dead-time selection.