Gate Driver HIP2101EIB product image

HIP2101EIB

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:6e725b69b849 Category: Brand:

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HIP2101EIB is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for HIP2101EIB

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:9V ~ 14V
  • Logic Voltage - VIL, VIH:0.8V, 2.2V
  • Current - Peak Output (Source, Sink):2A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):10ns, 10ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package:8-SOIC-EP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):114 V

Gate Driver datasheet and documents for HIP2101EIB

HIP2101EIB

Gate Driver Overview

The HIP2101EIB is a half-bridge gate driver from Renesas Electronics, designed for high-voltage MOSFET applications. It features independent high-side and low-side drivers with a peak output current of 2 A. The device operates within a supply voltage range of 9 V to 14 V. Key timing parameters include rise and fall times of 500 ns, with maximum on/off delays of 8 ns. It supports a maximum bootstrap voltage of 114 V and functions across an extended temperature range from -55°C to +150°C junction temperature.

Gate Driver Feature Summary

  • Provides independent high-side and low-side drive capabilities for half-bridge configurations
  • Delivers robust 2 A peak source and sink output current for efficient switching
  • Supports high-voltage operation with a maximum bootstrap voltage rating of 114 V

Gate Driver Applications

  • High-voltage MOSFET gate driving in power conversion systems
  • Industrial motor control applications requiring precise switching
  • Inverter circuits in renewable energy and grid infrastructure

Gate Driver Procurement Notes

Verify the specific suffix 'EIB' against official Renesas documentation to confirm package type and thermal pad configuration. Ensure compatibility with system voltage requirements and thermal management needs. Check for RoHS compliance status and moisture sensitivity levels prior to ordering. Confirm availability through authorized distributors as lead times may vary.

Gate Driver Selection Notes

Select this component when a reliable half-bridge driver with high voltage tolerance is required. The 2 A output current is suitable for medium-power MOSFETs. Consider the wide operating temperature range for harsh environments. Verify that the SOIC-EP package fits the PCB layout constraints. Compare with HIP2100 series if different pinout or thermal characteristics are needed.

Gate Driver Part Context

The HIP2101EIB belongs to the HIP2100/2101 family of high-voltage half-bridge gate drivers by Renesas. These devices are engineered for demanding power electronics applications. The family offers various package options to suit different thermal and spatial requirements. They are widely used in industrial and automotive power stages.

Gate Driver Replacement Considerations

HIP2101IBZ: Standard SOIC-8 package without exposed pad. HIP2101IBZT: Tape and reel version of the standard package. HIP2100EIBZ: Similar functionality but with different pinout and thermal specifications.

HIP2101EIBHIP2101EIB

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