Gate Driver HIP2101IBT product image

HIP2101IBT

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:416b316808c7 Category: Brand:

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HIP2101IBT is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for HIP2101IBT

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:9V ~ 14V
  • Logic Voltage - VIL, VIH:0.8V, 2.2V
  • Current - Peak Output (Source, Sink):2A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):10ns, 10ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):114 V

Gate Driver datasheet and documents for HIP2101IBT

HIP2101IBT

Gate Driver Overview

The HIP2101IBT is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation. It features two independent drivers configured for high-side and low-side MOSFET control, supporting N-channel devices with peak output currents of 2A for both sourcing and sinking. The device operates within a supply voltage range of 9V to 14V and utilizes a bootstrap configuration for the high-side driver, accommodating maximum voltages up to 114V. It is housed in an 8-SOIC package and is designed for non-inverting logic inputs with specified thresholds of 0.8V and 2.2V.

Gate Driver Feature Summary

  • Provides dual independent channel drive capability for high-side and low-side power switching applications
  • Supports bootstrap operation for floating high-side gate drive requirements
  • Features robust input logic compatibility with defined voltage thresholds for reliable signal reception

Gate Driver Applications

  • Motor control systems requiring precise switching of power MOSFETs
  • Power supply circuits utilizing half-bridge topologies
  • Industrial inverters and converters

Gate Driver Procurement Notes

Verify the specific suffix 'IBT' against official Renesas documentation to confirm the exact tape-and-reel packaging and temperature grade. Ensure the ordering part number matches the required package variant and that the component meets RoHS3 compliance standards as indicated for the series. Cross-reference datasheet revisions to confirm current manufacturing status.

Gate Driver Selection Notes

Select this component when a compact half-bridge solution with 2A drive strength is required for N-channel MOSFETs. Consider the 8-SOIC package constraints and the 9V to 14V supply voltage range. Evaluate thermal performance within the -55°C to +150°C junction temperature range and ensure the bootstrap circuit design aligns with the 114V high-side voltage limit.

Gate Driver Part Context

The HIP2101 belongs to the HIP2101 series of half-bridge gate drivers from Renesas. This family includes variants such as HIP2101IBZ and HIP2101IBZT, which share similar electrical characteristics but differ in packaging and reel specifications. The series is designed for driving power MOSFETs in various industrial and automotive applications.

Gate Driver Replacement Considerations

Check for direct substitutes like HIP2101IBZ or HIP2101IBZT if packaging differences are acceptable. Verify pinout compatibility and electrical parameters before substituting with other half-bridge drivers from different manufacturers.

HIP2101IBTHIP2101IBT

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