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HIP6601BCBZ is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.
The HIP6601BCBZ-T is a gate driver IC designed for synchronous rectification in buck converter applications. It features independent high-side and low-side drivers with a reduced power-on reset (POR) threshold. The device operates within a supply voltage range of 10.8V to 13.2V and supports MOSFETs with a maximum bootstrap voltage of 15V. Key electrical parameters include an output current of 730 mA, propagation delay of up to 30 ns, rise time of 50 ns, and fall time of 20 ns. It functions reliably across an operating temperature range of 0°C to +85°C.
Verify the exact suffix against official Renesas documentation, as packaging variations exist. Confirm RoHS compliance status via the specific datasheet revision. Check for End-of-Life notices or Product Change Notifications prior to design finalization. Ensure the selected package variant matches the PCB footprint requirements.
Select this component when designing synchronous buck converters requiring independent high-side and low-side gate driving capabilities. Consider the reduced POR feature if early system enablement is required. Verify that the SOIC-8 package fits the thermal and spatial constraints of the target application.
This part belongs to the HIP6601B series of gate drivers manufactured by Renesas Electronics Corporation. It is specifically engineered for power management integrated circuits (PMIC) applications. The device serves as a critical interface between control logic and power MOSFETs in switching regulator topologies.
Consult official cross-reference data for verified substitutes. Note that the HIP6601BECBZ is a related half-bridge variant; verify functional equivalence before substitution.
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