HMC-ABH241-SX

Overview

The HMC-ABH241-SX is a GaAs HEMT MMIC medium power amplifier designed for operation in the 50 GHz to 66 GHz frequency range. It provides a gain of 24 dB with a saturated output power (Psat) of 17 dBm and a 1-dB compression point (P1dB) of 17 dBm. The device utilizes a die package configuration, suitable for surface-mount integration into high-frequency RF systems.

Feature Summary

• Utilizes GaAs HEMT technology for high-frequency performance
• Designed as a medium power amplifier for signal chain applications
• Operates within the 50 GHz to 66 GHz millimeter-wave spectrum

Applications

• 802.11ad/WiGig wireless communication systems
• WLAN infrastructure components
• Millimeter-wave radar modules

Procurement Notes

Verify component authenticity through authorized Analog Devices channels or certified distributors. Confirm that the received unit matches the specific HMC-ABH241-SX designation. Ensure handling procedures account for the bare die format to prevent electrostatic discharge damage during installation.

Selection Notes

Select this component when a medium power amplification stage is required at millimeter-wave frequencies between 50 and 66 GHz. Consider its GaAs HEMT construction for compatibility with existing RF front-end designs requiring 24 dB gain and 17 dBm output power capabilities.

Part Context

This part belongs to the Analog Devices HMC series of monolithic microwave integrated circuits. It serves as a specialized active component within the broader portfolio of RF and microwave solutions, targeting high-speed data transmission and sensing applications in the E-band spectrum.