HMC-ALH313

Overview

The HMC-ALH313 is a three-stage GaAs MMIC HEMT low-noise amplifier die designed for operation between 27 and 33 GHz. It delivers 20 dB of gain, a 3 dB noise figure, and +12 dBm output power at 1 dB gain compression. The component utilizes InGaP/GaAs technology to ensure high performance in millimeter-wave applications.

Feature Summary

• Three-stage GaAs MMIC HEMT architecture
• Low noise figure specification
• High linearity output power capability

Applications

• VSAT systems
• DBS receivers
• Point-to-point microwave links
• Test and measurement equipment

Procurement Notes

Verify the specific suffix (e.g., SX) required for your application, as bare dies require specialized handling. Confirm availability through authorized distributors, as lead times may vary. Ensure ESD protection protocols are strictly followed during storage and assembly due to the exposed die nature of the component.

Selection Notes

Select this component when a compact, high-gain LNA is needed for W-band frequencies. Compare against alternatives based on noise figure requirements and available bias conditions. Ensure PCB layout supports the specific impedance matching needs for 27-33 GHz operation to maintain signal integrity.

Part Context

Part of Analog Devices' HMC series of RF amplifiers, the HMC-ALH313 targets high-frequency communication systems. It complements other MMIC solutions by providing integrated gain and noise performance in a small form factor suitable for dense circuit designs.

Replacement Considerations

Check for direct substitutes within the HMC family or comparable GaAs MMIC LNAs from other manufacturers. Verify pinout compatibility if using carrier boards, though bare dies often require custom integration. Ensure frequency range and gain specifications meet system requirements.