HMC-ALH369

Overview

The HMC-ALH369 is a GaAs MMIC HEMT three-stage, self-biased low-noise amplifier die designed for W-band applications. It operates within a frequency range of 24 to 40 GHz and provides 22 dB of gain. The device utilizes a single +5V bias supply with a current consumption of 66 mA, achieving a noise figure of 2 dB.

Feature Summary

• Three-stage GaAs MMIC HEMT architecture
• Self-biased design for simplified integration
• Low noise figure performance in W-band

Applications

• W-band communication systems
• Point-to-point microwave links
• Satellite ground station receivers

Procurement Notes

Verify the specific package configuration, as this component is identified as a die rather than a packaged IC. Confirm compatibility with your substrate and assembly processes for bare die handling. Ensure that the thermal and electrical requirements of your design align with the single-supply operation characteristics documented in the official specifications.

Selection Notes

Select this component for high-frequency W-band designs requiring integrated low-noise amplification. The self-biasing feature reduces external circuit complexity compared to non-self-biased alternatives. Evaluate the 22 dB gain against system link budget requirements to ensure adequate signal amplification without excessive noise contribution.

Part Context

This part belongs to Analog Devices' portfolio of RF and microwave monolithic microwave integrated circuits (MMICs). It is specifically engineered for high-frequency operations where compact size and low noise are critical. The use of GaAs HEMT technology supports performance in demanding wireless communication environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.