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Product Detailed Parameters
- Description:IC RF AMP GPS 35GHZ-45GHZ DIE
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tray
- Frequency:35GHz ~ 45GHz
- P1dB:6dBm
- Gain:16dB
- Noise Figure:2.2dB
- RF Type:General Purpose
- Voltage - Supply:4V
- Current - Supply:87mA
- Test Frequency:40GHz ~ 45GHz
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
- Grade:-
- Qualification:-
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Overview
The HMC-ALH376 is a GaAs MMIC HEMT three-stage, self-biased low noise amplifier die operating between 35 and 45 GHz. The amplifier provides 16 dB of gain, 2 dB noise figure, and +6 dBm output power at 1 dB gain compression. It requires a 4 V supply with an operating current of 87 mA. The device is designed for W-band applications requiring high performance in a compact die format.
Feature Summary
- Three-stage GaAs HEMT MMIC architecture for enhanced signal amplification
- Self-biasing design simplifies circuit integration and reduces external component requirements
- Optimized for low noise performance in the 35 to 45 GHz frequency range
Applications
- W-band communication systems
- Point-to-point microwave links
- Test and measurement equipment
Procurement Notes
Verify availability status as the part may be subject to limited supply or factory special orders. Confirm that the specific die configuration meets your PCB layout and bonding requirements. Ensure proper handling procedures are followed due to the bare die package type. Check for any regional shipping restrictions before placing orders.
Selection Notes
Select this component when a low noise amplifier is required for the 35-45 GHz band with minimal bias complexity. The self-biased feature reduces design overhead compared to externally biased alternatives. Consider the die form factor if space constraints preclude packaged solutions. Verify that the 4V supply voltage aligns with your system's power distribution network.
Part Context
This component belongs to Analog Devices' HMC series of RF amplifiers, specifically targeting millimeter-wave frequencies. It utilizes GaAs HEMT technology to achieve high linearity and low noise characteristics suitable for demanding wireless applications. The product line emphasizes performance in compact formats for modern communication infrastructure.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official Analog Devices resources for potential cross-references or newer generation replacements.
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