HMC-ALH445

Overview

The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifier die operating between 18 and 40 GHz. It provides 9 dB of gain, 3.9 dB noise figure at 28 GHz, and +12 dBm P1dB output power. The device requires a 5 V supply with 45 mA current consumption. It features 10 dB input return loss and operates within a temperature range of -55°C to +85°C.

Feature Summary

• Self-biased GaAs HEMT technology for simplified circuit design
• Wideband operation covering the W-band frequency spectrum
• Low noise figure performance optimized for sensitive receiver applications

Applications

• Point-to-point microwave radio links
• Satellite communication ground stations
• Electronic warfare systems
• Test and measurement equipment

Procurement Notes

Verify availability status carefully as this component may be subject to limited supply or factory special order constraints. Confirm specific package variants such as SX or DIE against project requirements. Ensure compliance with RoHS standards and check regional sales restrictions before finalizing procurement plans.

Selection Notes

Select this component for high-frequency W-band applications requiring low noise and moderate gain in a bare die format. Consider thermal management capabilities due to the exposed die package. Evaluate system-level impedance matching requirements to maximize the specified 10 dB input return loss performance across the entire operational bandwidth.

Part Context

This part belongs to Analog Devices' HMC-ALH series of low noise amplifiers. It utilizes Gallium Arsenide (GaAs) HEMT technology to achieve performance in the 18-40 GHz range. The product is categorized under wireless and RF integrated circuits, specifically designed for high-frequency signal processing tasks.

Replacement Considerations

No public confirmed substitute part numbers are available.